 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DTB114GK Transistors -500mA / -50V Digital transistors (with built-in resistors) DTB114GK Applications Inverter, Interface, Driver Feature 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy. 3) Higher mounting densities can be achieved. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) External dimensions (Unit : mm) SMT3 2.9 0.4 (3) 1.1 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 (1)Emitter (2)Base (3)Collector 1.9 Each lead has same dimensions Abbreviated symbol : L14 Packaging specifications Package Packaging type Code Part No. DTB114GK Basic ordering unit (pieces) SMT3 Taping T146 3000 Equivalent circuit B R C E E : Emitter C : Collector B : Base R=10k (typ.) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Each pin mounted on the recommended land Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -50 -50 -5 -500 200 150 -55 to +150 Unit V V V mA mW C C Rev.B 0.3Min. 1/2 DTB114GK Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff curren Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min. -50 -50 -5 - - - 56 7 - Typ. - - - - - - - 10 200 Max. - - - -0.5 -580 -0.3 - 13 - Unit V V V A A V - k MHz IC= -50A IC= -1mA IE= -720A VCB= -50V VEB= -4V IC/IB= -50mA/-2.5mA IC= -50mA , VCE= -5V - VCE= -10V , IE=50mA , f=100MHz Conditions Electrical characteristics curves VCE=5V Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1000 500 Ta=100C -1 -500m -200m -100m -50m IC/IB=20 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 -500 -1m -2m -5m -10m -20m -50m -100m -200m -500m Ta= -40C Ta=100C Ta=25C -20m -10m -5m -2m -1m -500 -1m -2m -5m -10m -20m Ta= -40C -50m-100m -200m -500m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current transfer ratio vs. Collector current Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of DTB114GK1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |